HiPIMS
This technology offers significant advantages in various sectors where precision and material deposition are of fundamental importance.
Low-temperature deposition – The process can be carried out at relatively low temperatures, making it suitable even for heat-sensitive substrates.
Superior quality finishes – HiPIMS preserves the typical advantages of traditional sputtering and does not generate droplets, resulting in lower surface roughness and higher quality thin films.
High degree of ionisation – Allows for more compact and uniform films, improving properties such as adhesion, density and mechanical strength.
Reactive processes – HiPIMS allows the use of reactive gases during deposition to modify the composition and properties of the film.
Lower deposition rate – Compared to DC sputtering or cathodic arc, HiPIMS has a lower deposition rate.